Effect of wet KOH etching on structural properties of GaN nanowires grown by SAG-MBE

Август 21, 2022

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Effect of wet KOH etching on structural properties of GaN nanowires grown by SAG-MBE

Содержание

2. Outline: Motivation Experiment: GaN NWs grown by SAG-MBE Selective etching using a KOH aqueous solution Identification
3. Motivation: ** * * Albert S. et al., Journal of Applied Physics 2013:113 pp. 114306 **
4. Experiment: SAG-MBE growth Scheme of SAG-MBE: SiOx photoresist SiO2 microspheres GaN nanowires MBE growth * **
5. Experiment: GaN NWs grown by SAG-MBE Ts = 815℃ Ts = 820℃ Ts = 825℃ *
6. Experiment idea: KOH selective etching * Stacia Keller et al 2014 Semicond. Sci. Technol. 29 113001
7. Experiment: KOH selective etching KOH : H2O (1:5) at 75 ℃ Chemical reactions: Scheme of experiment*:
8. Identification of NWs polarity: Before etching After etching Impact of the etching solution led to the
9. Experiment: KOH selective etching Before etching Before etching After 1.5 min etching After 1.5 min etching
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Слайд 2

Outline:
Motivation
Experiment:
GaN NWs grown by SAG-MBE
Selective etching using a KOH aqueous solution
Identification

of NWs polarity
Impact of etching time
Conclusions

Слайд 3

Motivation:
**
*
* Albert S. et al., Journal of Applied Physics 2013:113

pp. 114306
** Arafin S. et al., Journal of Nanophotonics 2013:7 pp. 074599

light emitting diodes (LEDs)
sensors
transistors
solar cells
water-splitting cells

Слайд 4

Experiment: SAG-MBE growth
Scheme of SAG-MBE:
SiOx
photoresist
SiO2 microspheres
GaN nanowires
MBE growth
*
**
* Dvoretckaia L.

N. et al., Journal of Physics: Conference Series 2017:917 pp. 062062 ** Dvoretckaia L. N. et al., Journal of Physics: Conference Series 2018:1124 pp. 022042

300 nm

SiOx

Si

1 um

Слайд 5

Experiment: GaN NWs grown by SAG-MBE
Ts = 815℃
Ts = 820℃
Ts =

825℃

*

* Gridchin, V.O. et al. Tech. Phys. Lett. 46, 1080–1083 (2020)

Слайд 6

Experiment idea: KOH selective etching
* Stacia Keller et al 2014 Semicond. Sci. Technol. 29 113001 **

Weijie Chen et al 2015 J. of Crystal Growth 426 168-172

*

**

Слайд 7

Experiment: KOH selective etching

KOH : H2O (1:5) at 75 ℃
Chemical reactions:
Scheme

of experiment*:

* V V Lendyashova et al 2020 J. Phys.: Conf. Ser. 1695 012047

Слайд 8

Identification of NWs polarity:
Before etching
After etching
Impact of the etching solution led

to the formation of hexagonal pyramid-like tops of GaN NWs grown on the SiOx what corresponds to the N-polar GaN NWs

Слайд 9

Experiment: KOH selective etching
Before etching
Before etching
After 1.5 min etching
After 1.5 min

etching

After 7 min etching

An increase in the etching time leads to the decomposition of GaN NWs on the inhibitor layer until they are removed