Point defects and diffusion

Содержание

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Crystalline solids have a very regular atomic structure: that is, the

Crystalline solids have a very regular atomic structure: that is, the

local positions of atoms with respect to each other are repeated at the atomic scale. These arrangements are called perfect crystal structures. However, above 0°C all crystalline materials are not perfect: the regular pattern of atomic arrangement is interrupted by crystal defects. The defect types are classified according to their dimension:
- Point defects
Line defects
Planar defects
Bulk defects

Importance of defects: Defects determine many properties of materials (those properties that we call "structure sensitive properties"). Even properties like the specific resistance of semiconductors, conductance in ionic crystals or diffusion properties in general which may appear as intrinsic properties of a material are defect dominated - in case of doubt by the intrinsic defects. Few properties - e.g. the melting point or the elastic modulus - are not, or only weakly influenced by defects.

Point Defects

Crystal defects

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Point Defects Point defects in ionic solids I Frenkel defect: anion

Point Defects

Point defects in ionic solids I

Frenkel defect: anion vacancy-interstitial

cation pair.

Schottky defect: anion -cation vacancy pair.

Anti-Schottky defect: anion-cation vacancy pair plus interstial pair.

Yanagida et al.: p. 59

http://www.tf.uni-kiel.de/matwis/amat/def_en/index.html

Missing atoms within a structure, atoms at "wrong" sites, "wrong" atoms (impurities) are considered 0-dimensional irregularities and are called point defects.

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F-center: anion vacancy with excess electron replacing the missing anion e-

F-center: anion vacancy with excess electron replacing the missing anion

e-

M-center:

two anion vacancies with one excess electron each

e-

e-

Isovalent substitute atom

Point Defects

Point defects in ionic solids II

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M corresonds to the species. These include: atoms - e.g. Si,

M corresonds to the species. These include:
atoms - e.g. Si, Ni,

O, Cl,
vacancies - V
interstitials - i
electrons - e
holes - h (missing electrons)
S indicates the lattice site that the species occupies. For instance, Ni might occupy a Cu site. In this case, M in the general formula would be Ni and S would be replaced by Cu. Interstitial sites are also used here.
C corresponds to the electric charge of the species relative to site that it occupies. To continue the previous example, Ni often has the same valency as Cu, so the relative charge is zero. To indicate null charge, the sign "×" is used. A single "∙" indicates a single positive charge, while two would represent two positive charges. Finally," ' "signifies a single negative charge, so two, would indicate a double negative charge.

Point Defects

Kröger-Vink notation I

Point defects can be treated like chemical species. The Kröger-Vink notation is a set of conventions used to describe defect species e.g their electical charge and their lattice position.
General form:

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Point Defects Kröger-Vink notation II = an aluminium ion sitting on

Point Defects

Kröger-Vink notation II

= an aluminium ion sitting on an aluminium

lattice site, with neutral charge.
= a nickel ion sitting on a copper lattice site, with neutral charge.
= a chlorine vacancy, with singular positive charge.
= a calcium interstitial ion, with double negative charge. = an electron. A

Examples

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Reaction involving defects must be: Example: Point Defects Defect chemical reaction

Reaction involving defects must be:
Example:

Point Defects

Defect chemical reaction

Formation of a

Schottky defect in periclase:

- mass balanced
- charge balanced: the effective charge must
be balanced.
- site balanced: the ratio between
anion and cation must remain constant

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Gperf: free energy of the perfect crystal hdef: enthalpy of formation

Gperf: free energy of the perfect crystal
hdef: enthalpy of formation

of one defect
sdvib: vibrational entropy of one defect
Sconf: configurational entropy due to the arrangement of n defects

Thermodynamics of point defects I

Point Defects

Yanagida et al.: p. 60-61

- Free energy of a real crystal containing n Frenkel defect

gdef: free energy of one defect

Change of the free energy due to the formation of n defects:

Configurational entropy

(1)

(2)

(3)

(4)

s. Exercice 2.1-4 in http://www.tf.uni-kiel.de/matwis/amat/def_en/index.html

- Free energy of a perfect crystal

- In a perfect crystal the configurational contribution is zero

- The entropy has configurational, Sconf, and vibrational contributions Svib

(5)

(6)

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Yanagida et al.: p. 60-61 Number of ways to arrange nv

Yanagida et al.: p. 60-61

Number of ways to arrange nv vacancies

within a crystal with N lattice sites and to distribute ni interstitial sites :

s. Exercice 2.1-4 in http://www.tf.uni-kiel.de/matwis/amat/def_en/index.html

(7)

(8, Stirling approximation)

Configurational entropy (assuming number of interstial sites = number of lattice sites):

Change of the free energy due to the formation of n defects:

- Concentration of defects at equilibrium

(9)

(10)

(11)

Thermodynamics of point defects II

Point Defects

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Entropy Configurational Entropy Entropy originating from the many possibilities of arranging

Entropy
Configurational Entropy
Entropy originating from the many possibilities of arranging many vacancies
Formation

("vibrational") Entropy
It can be seen as the additional entropy or disorder added to the crystal with every additional vacancy. There is disorder associated with every single vacancy because the vibration modes of the atoms are disturbed by defects.Atoms with a vacancy as a neighbour tend to vibrate with lower frequencies because some bonds, acting as "springs", are missing. These atoms are therefore less well localized than the others and thus more "unorderly" than regular atoms.

Thermodynamics of point defects III

Point Defects

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G n G0 Δhf G neq -TΔSc Gmin T=const. The stippled

G

n

G0

Δhf

G

neq

-TΔSc

Gmin

T=const.

The stippled lines are for a higher temperature than for the

solid lines. The equilibrium defect concentration increases thus with increasing temperature.

Thermodynamics of point defects IV

Point Defects

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Point Defects Equilibrium Schottky defect concentration - Number of Schottky pairs:

Point Defects

Equilibrium Schottky defect concentration

- Number of Schottky pairs:

- Formation

of a Schottky defect pair in NaCl:

- Arrhenius plot:

ln(XV)

103/T

Yanagida et al.: p. 62--64

- Energetics of a Schottky pair in NaCl

(1)

(2)

(3)

(4)

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Extrinsic defect concentration I - Total number of cation vacancies: -

Extrinsic defect concentration I

- Total number of cation vacancies:

- Substitution of

a divalent cation (Ca) for
Na in NaCl and formation of extrinsic
vacancies:

- Formation of intrinsic vacancies:

Point Defects

- Number of anion vacancies:

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Point Defects ln(XV) 103/T XCa=10-4 10-5 10-6 10-4 10-5 10-6 cation

Point Defects

ln(XV)

103/T

XCa=10-4

10-5

10-6

10-4

10-5

10-6

cation vacancies

anion vacancies

- Temperature and impurity content dependence
of vacancy

concentrations in NaCl.

Extrinsic defect concentration II

Слайд 15

Point Defects Nonstoichiometric defects In nonstoichiometric defect reactions the composition of

Point Defects

Nonstoichiometric defects

In nonstoichiometric defect reactions the composition of the

cystal changes as a result of the reaction. One of the more common nonstoichiometric reactions that occurs at low oxygen partial pressure is

The two electrons remain localized at the vacant site to guarantee charge neutrality.

At higher oxigen partial pressure addition of oxygen may lead to nonstoichiometry:

The label h means "electron hole" e.g. the oxygen atom "steels" the electrons from a cation leaving holes behind. The above reaction in the case of iron would be written

The vacancy in the left side of the first reaction is necessary to maintain site neutrality. The overall reaction for the oxidation of magnetite is given by


Слайд 16

Atomic diffusion is a process whereby the random thermally-activated hopping of

Atomic diffusion is a process whereby the random thermally-activated hopping of

atoms in a solid results in the net transport of atoms. For example, helium atoms inside a balloon can diffuse through the wall of the balloon and escape, resulting in the balloon slowly deflating. Other air molecules (e.g. oxygen, nitrogen) have lower mobilities and thus diffuse more slowly through the balloon wall. There is a concentration gradient in the balloon wall, because the balloon was initially filled with helium, and thus there is plenty of helium on the inside, but there is relatively little helium on the outside (helium is not a major component of air).

Point Defects

Diffusion

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Diffusion Type of diffusion Diffusion paths: HRTEM image of an interface

Diffusion

Type of diffusion

Diffusion paths:

HRTEM image of an interface between an

aluminum (left) and a germanium grain. The black dots correspond to atom columns.

Surface diffusion

Bulk diffusion

Grain
baoundary
diffusion

Diffusion mechanisms

In general: Dgp >Dsd >Dgb >>Db for high
temperatures and short diffusion times

Diffusion through the gas phase

Self diffusion:
Motion of host lattice atoms. The diffusion coefficient for self diffusion depends on the diffusion mechanism:
Vacancy mechanism: Dself = [Cvac] Dvac
Interstitial mechanism: Dself = [Cint] Dint

Inter diffusion, multicomponent diffusion:
Motion of host and foreign species. The fluxes and diffusion coefficient are correlated

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Types of diffusion kinetics: 3 regimes A, B and C are

Types of diffusion kinetics: 3 regimes A, B and C are

usually distinguished. They are represented using a parallel boundary model:
Type A: The diffusion front in the bulk and in the boundary advance ± with the same speed
valid for: - long annealing times
- small grain sizes
-volume diffusion coefficient Db ≈ interface
diffusion coefficient D
Type B: The diffusion in the grain boundary is
considerably faster than in the bulk, but a certainamount of diffusant is lost to the bulk grains.
Type C: The diffusion in the bulk is negligible,
the diffusant is transported only through the grainboundaries.
valid for: - short annealing times
(- large grain sizes)
-volume diffusion coefficient << interface
diffusion coefficient

General diffusion law z ~ Dt1/n

Diffusion

Diffusion regimes

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Diffusion Atomistic diffusion mechanisms Exchange mechanism Ring rotation mechanicsm Vacancy mechanism

Diffusion

Atomistic diffusion mechanisms

Exchange mechanism
Ring rotation mechanicsm
Vacancy mechanism
Interstitial mechanism

Diffusion couple

t0

Yanagida et

al.: p. 58 - 68

t1

t2

A diffusion couple is an assembly of two materials in such intimate contact that the atoms of each material can diffuse into the other.

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Diffusion Fick’s 1. law dC dx C x The flux J

Diffusion

Fick’s 1. law

dC
dx

C

x

The flux J in direction x of the

red atoms is proportional to the concentration gradient along x. It is obvious that the diffusion of the red atoms is coupled to the diffusion of the green atoms in the -x direction!

Yanagida et al.: p. 122-132

Coupling of fluxes:

Слайд 21

Diffusion Fick’s 2. law In regions where the concentration gradient is

Diffusion

Fick’s 2. law


In regions where the concentration gradient is

convex, the flux (and the concentration) will decrease with time, for concave gradients it will increase.

x

x+∆x

Jx

Jx+∆x

x-∆x

x

C(xi)

t

C

xi

Слайд 22

Diffusion Solutions to Fick’s 2. law I -Finite thin film source,

Diffusion

Solutions to Fick’s 2. law I

-Finite thin film source, one-dimensional

diffusion into
semi-infinite solid:

c(x≠0,t=0): 0

s: initial amount of diffusive
species.

x

c

t1

t2

t0 < t1 < t2

t0

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Diffusion 1-D diffusion 1-D diffusion from a finite point source

Diffusion

1-D diffusion

1-D diffusion from a finite point source

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-Finite thin film source of constant concentration, one- dimensional diffusion into

-Finite thin film source of constant concentration, one-
dimensional diffusion into semi-infinite

solid:

c(x≠0,t=0): 0
c(x=0,t): const.

x

c

t1

t2

t0 < t1 < t2

t0

c0: initial concentration
erf: error function

Diffusion

Solutions to Fick’s 2. law II

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Diffusion Diffusion couple c(x c(x > 0,t=0): c2 +x -x c

Diffusion

Diffusion couple

c(x < 0,t=0): c1
c(x > 0,t=0): c2

+x

-x

c

t1

t0 < t1


t0

c1

c2

: = value of variable "x" in the error function table

Слайд 26

Diffusion 1-D diffusion couple Diffusion profiles for 1-D diffusion couple for different diffusion times

Diffusion

1-D diffusion couple

Diffusion profiles for 1-D diffusion couple for different

diffusion times
Слайд 27

Diffusion

Diffusion

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- Distance x’ from a source with finite concentration where a

- Distance x’ from a source with finite concentration where a

certain small amount of the initial concentration has passed f.ex. < 10-3 c0 :

solving for x’:

10-3co

x

c

co

x’

Diffusion

Diffusion front

Diffusion profile after time t:

Material that diffused beyond the point x'
at which the concentration is 10-3 c0 :

Слайд 29

Diffusion Diffusion: A thermally activated process I Energy of red atom=

Diffusion

Diffusion: A thermally activated process I

Energy of red atom= ER

Minimum energy

for jump = EA

Probability that an atom has an energy >EA:

Diffusion coefficient

D0: Preexponential factor, a constant which is a function of jump frequency, jump distance and coordination number of vacancies

Number
of atoms

Energy

EA

ER

Boltzmann distribution

T2

T1

T1 < T2

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Diffusion Diffusion: A thermally activated process II The preexponential factor and

Diffusion

Diffusion: A thermally activated process II

The preexponential factor and the activation

energy for a diffusion process can be determined from diffuson experiments done at different temperatures. The result are presented in an Arrhenius diagram.

lnD

1/T

In the Arrhenius diagram the slope is proportional to the activation energy and the intercept gives the preexponential factor.

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Tracer diffusion coefficients of 18O determined by SIMS profiling for various

Tracer diffusion coefficients of 18O determined by SIMS profiling for various

micro- and nanocrystalline oxides: coarse grained titania c-TiO2 (- - - -), nanocrystalline titania n-TiO2 (- - - -), microcrystalline zirconia m-ZrO2 (– – –), zirconia doped with yttrium or calcium (YSZ —· · —, CSZ — · —), bulk diffusion DV ( ) and interface diffusion DB (♦) in nanocrystalline ZrO2 (——), after Brossmann et al. 1999.

Diffusion

Diffusion coefficients I

- Предыдущая
Аминокислоты. Классификация аминокислот
Следующая -
Crystal defects and imperfections

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