Extended Defects in c-Si

Сентябрь 14, 2022

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Extended Defects in c-Si

Содержание

2. General Perspective Materials Science in Semiconductor Processing (MSSP) Exact type of the predominant defects dependent on
3. In the case of Non-amorphizing Implants {113} rod-like defects; {113} planes elongated along the directions Formation
4. Terms Weak Beam Dark Field (WBDF) image High-Resolution TEM (HREM) Bravais lattices: 14 different point lattices
5. {113} Defects
6. {113} Defects (800℃ of a 40 keV, 5x1013 Si+)
7. {113} Defects upon Annealing
8. Energies
9. Energies Formation energy of a defect: energy incease due to the incorporation of an extra Si
10. In the case of Medium-dose Implants 100 keV Si+–implanted Si at 800 ℃ {113} and dislocation
11. Medium-dose Implants
12. In the case of Amorphizing Implants Oswald ripening process; formation energy decreases as its size increases
13. Amorphizing Implants Formation energy of PDLs higher than FDLs For low-budget thermal annealings, clusters and {113}
14. Amorphizing Implants
15. Amorphizing Implants
16. Thermal Evolution of FDLs
17. Competition between PDLs and FDLs
18. Origin of {113} Defects
19. Defect Evolution Di-interstitials {113} defects PDLs and FDLs FDLs Surface effect as a sink
20. Defect Evolution Driving force for the growth of a given type of defects is due to
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Слайд 2

General Perspective
Materials Science in Semiconductor Processing (MSSP)
Exact type of the predominant

defects dependent on ion dose, energy and annealing conditions
Evolution (nucleation, growing, transforming, dissolving) upon annealing

Слайд 3

In the case of Non-amorphizing Implants
{113} rod-like defects; {113} planes elongated

along the <110> directions
Formation energy; 1-1.3 eV and slowly decreasing as the size of the defect increases
Defects growing in size and decrease in density upon annealing
Activation energy (3.7 eV) = binding energy + migration energy

Слайд 4

Terms
Weak Beam Dark Field (WBDF) image
High-Resolution TEM (HREM)
Bravais lattices: 14 different

point lattices
Point lattice + atom group = periodic atom array
Burgers vector: the shortest lattice translation vector of the crystalline structure

Слайд 5

{113} Defects

Слайд 6

{113} Defects (800℃ of a 40 keV, 5x1013 Si+)

Слайд 7

{113} Defects upon Annealing

Слайд 8

Energies

Слайд 9

Energies
Formation energy of a defect: energy incease due to the incorporation

of an extra Si atom into a defect
Activation energy for the dissolution of the defects = activation energy for self-diffusion – formation of the defect =binding energy + migration energy

Слайд 10

In the case of Medium-dose Implants
100 keV Si+–implanted Si at 800

℃
{113} and dislocation loops (DL) coexist after 5 min annealing at 800 ℃
{113} defects are the source of DLs
Perfect dislocation loops (PDLs) and faulted dislocation loops (FDLs)

Слайд 11

Medium-dose Implants

Слайд 12

In the case of Amorphizing Implants
Oswald ripening process; formation energy decreases

as its size increases and the supersaturation of Si’s around a large defect is smaller than around a small defect
Loop density varies with 1/t and the mean radius increases with t1/2
Wafer surface can be a better sink: when the free surface of the wafer is put closer a faster dissolution of PDL’s is observed but the emitted Si’s are not trapped by the FDL’s.

Слайд 13

Amorphizing Implants
Formation energy of PDLs higher than FDLs
For low-budget thermal annealings,

clusters and {113} defects coexist and the latter become predominant when increasing the annealing time
For higher thermal budgets, dislocation loops of two types are also found among the defects
For the highest temperatures only faulted dislocation loops survive

Слайд 14

Amorphizing Implants

Слайд 15

Amorphizing Implants

Слайд 16

Thermal Evolution of FDLs

Слайд 17

Competition between PDLs and FDLs

Слайд 18

Origin of {113} Defects

Слайд 19

Defect Evolution
Di-interstitials
{113} defects
PDLs and FDLs
FDLs
Surface effect as a sink

Слайд 20

Defect Evolution
Driving force for the growth of a given type of

defects is due to the decrease of the formation energy as its size increases
The change from one type of defect to the next is driven by the reduction of the formation energy consecutive to the crystallographical reordering of the same number of Si atoms into the new defect
Formation energy change due to the size increase or in their structural characteristics

Extended Defects in c-Si

Содержание

General PerspectiveMaterials Science in Semiconductor Processing (MSSP)Exact type of the predominant

In the case of Non-amorphizing Implants{113} rod-like defects; {113} planes elongated

TermsWeak Beam Dark Field (WBDF) imageHigh-Resolution TEM (HREM)Bravais lattices: 14 different

{113} Defects

{113} Defects (800℃ of a 40 keV, 5x1013 Si+)

{113} Defects upon Annealing

Energies

EnergiesFormation energy of a defect: energy incease due to the incorporation

In the case of Medium-dose Implants100 keV Si+–implanted Si at 800

Medium-dose Implants

In the case of Amorphizing ImplantsOswald ripening process; formation energy decreases

Amorphizing ImplantsFormation energy of PDLs higher than FDLsFor low-budget thermal annealings,

Amorphizing Implants

Amorphizing Implants

Thermal Evolution of FDLs

Competition between PDLs and FDLs

Origin of {113} Defects

Defect EvolutionDi-interstitials{113} defectsPDLs and FDLsFDLsSurface effect as a sink

Defect EvolutionDriving force for the growth of a given type of

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General Perspective
Materials Science in Semiconductor Processing (MSSP)
Exact type of the predominant

In the case of Non-amorphizing Implants
{113} rod-like defects; {113} planes elongated

Terms
Weak Beam Dark Field (WBDF) image
High-Resolution TEM (HREM)
Bravais lattices: 14 different

Energies
Formation energy of a defect: energy incease due to the incorporation

In the case of Medium-dose Implants
100 keV Si+–implanted Si at 800

In the case of Amorphizing Implants
Oswald ripening process; formation energy decreases

Amorphizing Implants
Formation energy of PDLs higher than FDLs
For low-budget thermal annealings,

Defect Evolution
Di-interstitials
{113} defects
PDLs and FDLs
FDLs
Surface effect as a sink

Defect Evolution
Driving force for the growth of a given type of